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mga-16116 dual lna for balanced application 450 C 1450 mhz data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 60 v esd human body model = 300 v refer to avago application note a004r: electrostatic discharge, damage and control. pin use pin use 1 rfin1 10 gnd 2 gnd 11 gnd 3 gnd 12 rfout1 4 rfin2 13 not used 5 bias_out2 14 bias_in1 6 vsd2 15 vsd1 7 bias_in2 16 bias_out1 8 not used 17 gnd 9 rfout2 C C avago 16116 yyww xxxx description avago technologies mga-16116 is an ultra low-noise high linearity amplifer pair with built-in active bias and shutdown features for balanced applications in the 900 mhz band. shutdown functionality is achieved using a single dc voltage input pin.high linearity is achieved through the use of avago technologies proprietary gaas enhancement-mode phemt process [1] . it is housed in a miniature 4.0 x 4.0 x 0.85 mm 16-pin quad flat no-lead (qfn). the compact footprint coupled with ultra low noise and high linearity makes mga-16116 an ideal choice for basestation transmitters and receivers. for applications > 1450 mhz, it is recommended to use mga-16216 1440-2350 mhz or mga-16316 1950-4000 mhz. all 3 products share the same package and pin out confguration. component image 4.0 x 4.0 x 0.85 mm 3 16-lead qfn features ? ultra low noise figure ? variable bias and shutdown functionality ? high iip3: +19 dbm typ. ? gaas e-phemt technology [1] ? small package size: 4.0 x 4.0 x 0.85 mm 3 ? rohs and msl1 compliant. typical performances 900 mhz @ 4.8 v, 60.9 ma (typ per amplifer) ? gain: 18.4 db ? nf: 0.27 db [2] ? iip3: 19.1 dbm ? p1db: 21.2 dbm ? shutdown voltage vsd range > 1.6 v ? total shutdown current (vsd1, vsd2 = 3 v): 1.84 ma applications ? basestation receivers and transmitters in balanced confguration. ? ultra low-noise rf amplifers. notes: 1. enhancement mode technology employs positive vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. measured at rfin pin of packaged part, other losses deembedded. 3. good rf practice requires all unused pins to be grounded. note: package marking provides orientation and identifcation 16116 = device code yyww = date code identifes year and work week of manufacturing xxxx = last 4 digit of assembly lot number pin 1 pin 4 pin 3 pin 2 pin 12 pin 9 pin 10 pin 11 pin 17 pin 5 pin 8 pin 7 pin 6 pin 16 pin 13 pin 14 pin 15 view from the top pin confguration
2 absolute maximum rating [1] t a = 25 c symbol parameter units absolute maximum v dd drain voltage, rf output to ground v 5.5 idd drain current ma 100 vsd shutdown voltage v 5.5 p in cw rf input power with lna on dbm 27 p in cw rf input power with lna of dbm 27 p d power dissipation mw 550 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [3] (vd = 4.8 v, idd = 53 ma, t c =100 c) q jc = 58.6c/w notes: 1. operation of this device is excess of any of these limits may cause permanent damage. 2. source lead temperature is 25 c. derate 17 mw/c for tc > 118 c. 3. thermal resistance measured using 150 c infra-red microscopy technique. electrical specifcations t a = 25 c, vdd1 = vdd2 = 4.8 v, vsd1 = vsd2 = 0 v at rbias = 1.5 kohm, rf performance at 900 mhz, cw operation unless otherwise stated. symbol parameter and test condition units min. typ. max. vdd supply voltage v 4.8 idd total supply current per amplifer (idq+ibias) ma 48 60.9 72 gain gain db 17.2 18.4 19.4 nf [1] noise figure db 0.27 0.45 op1db output power at 1db gain compression dbm 21.2 iip3 [2] input third order intercept point dbm 17 19.1 s11 input return loss, 50 ? source db -10.9 s22 output return loss, 50 ? load db -17.5 s12 reverse isolation db -22.4 s31 isolation between rfin1 and rfin2 db -36.8 vsd1,2 [3] maximum shutdown voltage required to turn on lna v 0.5 vsd1,2 [3] minimum shutdown voltage required to turn off lna v 1.6 idq [4] current at vdd with vsd = 0 v ma 58.6 current at vdd with vsd = 3 v ma 0.01 isd [4] current at vsd with vsd = 0 v m a 4 current at vsd with vsd = 3 v m a 220 ibias [4] current at vbias with vsd = 0 v ma 2.3 current at vbias with vsd = 3 v ma 1.61 notes: 1. noise fgure at the dut rf input pin, board losses are deembedded. 2. iip3 test condition: frf1-frf2 = 1 mhz with input power of -20 dbm per tone. 3. vsd1 and vsd2 are active low. 4. refer to figure 6 for more details.
3 product consistency distribution charts usl lsl lsl usl lsl usl 45 50 55 60 65 70 75 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 16 17 18 19 20 21 22 23 24 16.9 17.2 17.5 17.8 18 18.2 18.5 18.8 19 19.2 19.5 figure 1. idd, lsl = 48 ma , nominal = 60.9 ma, usl = 72 ma figure 2. nf, nominal = 0.27 db, usl = 0.45 db figure 3. iip3, lsl = 17 dbm, nominal = 19.1 dbm figure 4. gain, lsl = 17.2 db, nominal = 18.4 db, usl = 19.4 db notes: 1. distribution data sample size is 6500 samples taken from 12 diferent wafer lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. circuit trace losses for nf have been de-embedded from measurements above.
4 demo board layout demo board schematic figure 5. demo board layout diagram figure 6. demo board schematic diagram notes: 1. recommended pcb material is 10 mils rogers ro4350. 2. suggested component values may vary according to layout and pcb material. 3. input board loss at 900 mhz is 0.056 db 4. the schematic is shown with the assumption that similar pcb is used for all mga-16116, mga-16216 and mga-16316. 5. detail of the components needed for this product is shown in table 1. 6. r1 and r6 are for low frequency stability. 7. bias to each lna is adjustable using r3 and r8 (see figure 6). increasing r3 and r8 will reduce bias current (idd) and vice-versa. 8. r9/r10 are stability improvement resistors that may not be needed in actual application. they are included in the demoboard to provide isolation from power supply noise. 9. center paddle is grounded. table 1. component list for 900 mhz matching part size value detail part number c1, c12 0402 20 pf gjm1555c1h200gb01 c2, c13, c8, c22 0402 0.1 m f grm155r71c104ka88d c3, c9, c16, c19 0402 100 pf grm1555c1h101jd01e c6, c20, c23, c34 0805 4.7 m f grm21br60j475ka11l c7, c21 0402 12 pf gjm1555c1h120gb01 c25, c26 0402 not used C l1, l2 0402 68 nh lqw15an68ng00 l3, l4 0402 120 nh lqw15anr12j00 r1, r6 0402 51 ohm rk73b1ettp510j r3, r8 0402 1.5 kohm rk73b1eltp152j r4, r7 0402 0 ohm rk73b1ettp0r0j r9, r10 0402 10 ohm rk73b1ettp100j ro4350 dk 3.48 h 10mil g 0.45mm w 0.58mm mga-16x16 demoboard (4-port) rev 1 c26 rfin rfout r9 c7 l4 c21 l3 c23 c16 c3 r6 c13 c12 l2 r8 c1 l1 c2 r1 r3 vsd2 c20 vdd1 vsd1 c6 c25 r7 c22 c19 r4 c8 c9 april 2011 vdd2 r10 c24
5 table 2. below is the table showing the mga-16116 refection coefcient parameters tuned for maximum oip3, vdd = 4.8 v, idd = 35 ma per amplifer. input gamma is tuned for fmin. the refection coefcients are for single amplifer. frequency (mhz) gamma load position iip3 (dbm) gain (db) magnitude angle 450 0.51 44.1 17.38 20.02 700 0.643 34.9 22.09 16.8 835 0.643 46.5 25.18 15.1 950 0.386 40.0 23.20 16.62 1450 0.514 86.4 25.77 14.39 table 3. below is the table showing the mga-16116 refection coefcient parameters tuned for maximum oip3, vdd = 4.8 v, idd = 60 ma per amplifer. input gamma is tuned for fmin. the refection coefcients are for single amplifer. frequency (mhz) gamma load position iip3 (dbm) gain (db) magnitude angle 450 0.514 43.2 21.32 20.34 700 0.39 40.5 23.15 18.6 835 0.515 57.6 26.90 16.1 950 0.386 20.0 26.71 16.31 1450 0.643 92.9 29.83 13.98 table 4. below is the table showing the mga-16116 refection coefcient parameters tuned for maximum oip3, vdd = 4.8 v, idd = 75 ma per amplifer. input gamma is tuned for fmin. the refection coefcients are for single amplifer. frequency (mhz) gamma load position iip3 (dbm) gain (db) magnitude angle 450 0.128 59.8 21.07 22.75 700 0.257 30.1 24.33 19.16 835 0.257 149.9 23.80 18.46 950 0.128 180 24.74 17.98 1450 0.257 29.9 28.73 15.03 notes: 1. iip3 test condition: frf1-frf2 = 1 mhz with input power of -20 dbm per tone. 2. idd can be obtained by varying the vg1/vg2. refer to fgure 7. figure 7. rfinput and rfoutput reference plane notes: 1. maximum oip3 is measured on coplanar waveguide made on 0.010 inch thick roger 4350.
6 typical 900 mhz rf performance plots rf performance at t a = 25 c, vdd = 4.8 v, idd = 60 ma. measurements made on single-ended amplifer in lna mode tuned to 900 mhz, using figure 5 demoboard and figure 6 circuit. signal = cw unless stated otherwise. iip3 test condition: frf1-frf2 = 1 mhz with input power of -20 dbm per tone. figure 8. nf vs frequency vs temperature [1] figure 9. gain vs frequency vs temperature figure 10. iip3 vs frequency vs temperature figure 11. op1db vs frequency vs temperature figure 12. input return loss, output return loss, gain, reverse isolation vs frequency figure 13. mu stability factors vs frequency vs temperature 1 0 0 c 2 5 c - 4 0 c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 450 550 650 750 850 950 1050 1150 1250 1350 1450 frequency (mhz) nf (db) 12 14 16 18 20 22 24 26 gain (dbm) 450 550 650 750 850 950 1050 1150 1250 1350 1450 frequency (mhz) 1 0 0 c 2 5 c - 4 0 c 8 10 12 14 16 18 20 22 24 450 550 650 750 850 950 1050 1150 1250 1350 1450 iip3 (dbm) frequency (mhz) - 4 0 c 2 5 c 1 0 0 c 15 16 17 18 19 20 21 22 23 24 25 450 650 850 1050 1250 1450 frequency (mhz) op1db (dbm) 1 0 0 c 2 5 c - 4 0 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 mu 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) 1 0 0 c - 4 0 c 2 5 c s(2,1) s(1,1) s(2,2) s(1,2) -60 -50 -40 -30 -20 -10 0 10 20 30 s-parameter (db) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 frequency (ghz)
7 figure 14. mu stability factors vs frequency vs temperature figure 15. input ports isolation (s31) vs frequency figure 16. idd vs rbias [2] figure 17. idd vs vsd notes: 1. circuit trace losses for nf have been de-embedded from measurements above. 2. rbias is r3 and r8 from figure 6. 1 0 0 c 2 5 c - 4 0 c 1 0 0 c - 4 0 c 2 5 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) muprime -60 -55 -50 -45 -40 -35 -30 -25 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 frequency (ghz) isolation s31 (db) 40 45 50 55 60 65 70 75 80 85 90 0 500 1000 1500 2000 2500 3000 rbias (ohm) idd (ma) 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vsd (v) idd (ma)
8 table 5. typical scattering parameters, vdd = 4.8 v, idd = 35 ma lna spar (100 mhz C 20 ghz) the s-parameter are for single amplifer. freq s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (db) (ang) (db) (ang) (db) (ang) (db) (ang) 0.1 -1.022 -28.498 29.161 154.654 -37.965 79.027 -7.090 -19.544 0.5 -6.649 -94.870 22.772 104.259 -26.459 66.399 -13.896 -50.600 0.7 -8.297 -112.042 20.318 93.331 -24.049 64.475 -15.882 -53.370 0.9 -9.364 -125.539 18.444 84.974 -22.211 62.286 -17.478 -54.610 1.0 -9.758 -130.241 17.596 81.438 -21.400 61.255 -17.917 -53.566 1.5 -10.971 -151.257 14.416 66.113 -18.221 54.575 -20.357 -53.259 1.7 -11.091 -159.069 13.414 60.566 -17.239 51.394 -21.981 -58.813 1.9 -11.104 -166.151 12.539 55.320 -16.328 48.319 -23.407 -64.718 2.0 -11.117 -169.353 12.131 52.718 -15.905 46.647 -23.978 -68.957 2.5 -11.087 177.265 10.360 40.267 -14.104 38.400 -26.564 -97.344 3.0 -11.081 165.669 8.951 28.433 -12.604 29.781 -27.136 -132.391 3.5 -11.096 154.720 7.826 16.983 -11.325 21.025 -25.584 -162.526 4.0 -11.006 142.943 6.892 5.622 -10.213 12.016 -23.963 170.627 4.5 -10.720 129.982 6.100 -5.563 -9.244 2.746 -21.945 142.320 5.0 -10.073 118.799 5.351 -16.665 -8.445 -6.661 -19.977 114.528 5.5 -9.286 106.890 4.697 -27.610 -7.735 -16.237 -17.197 88.526 6.0 -8.439 94.245 4.087 -38.486 -7.175 -26.218 -14.231 70.377 7.0 -7.649 72.483 2.997 -58.517 -6.183 -44.375 -10.813 52.241 8.0 -9.206 56.581 2.362 -77.126 -5.224 -62.113 -10.533 46.694 9.0 -11.853 31.257 1.930 -96.806 -4.263 -81.118 -10.307 43.266 10.0 -11.268 -4.194 1.289 -117.528 -3.757 -101.712 -8.627 20.267 11.0 -10.277 -26.164 0.324 -136.898 -3.704 -120.862 -7.062 -2.650 12.0 -11.155 -52.090 -0.159 -153.598 -3.353 -139.372 -6.702 -18.056 13.0 -20.494 -61.926 -0.820 -168.479 -3.505 -153.688 -6.926 -14.524 14.0 -22.385 -159.458 -0.683 171.235 -2.651 -176.492 -6.999 -18.503 15.0 -14.569 127.065 -0.727 147.438 -2.279 158.611 -7.115 -26.831 16.0 -12.363 64.821 -1.734 115.001 -2.934 125.555 -5.770 -43.836 17.0 -7.890 -127.305 -6.052 131.616 -6.607 139.045 -2.049 -74.412 18.0 -12.876 -10.894 -5.846 90.393 -6.352 97.052 -2.285 -68.870 19.0 -7.087 108.141 -4.538 103.243 -4.669 108.441 -3.339 -89.195 20.0 -4.516 31.361 -4.779 55.113 -5.022 58.513 -4.579 -112.660 table 6. typical noise parameters, for single amplifer, vdd = 4.8 v, idd = 35 ma freq fmin opt opt r n/50 ghz db mag. ang. 450 0.31 0.570 -15.8 0.039 700 0.23 0.442 4.9 0.035 835 0.21 0.426 25.7 0.034 950 0.23 0.392 34.6 0.035 1450 0.4 0.210 86.0 0.037 notes: 1. the fmin values are based on noise fgure measurements at multiple input impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 7. 3. idd can be obtained by varying the vg1/vg2. refer to fgure 7.
9 table 7. typical scattering parameters, vdd = 4.8 v, idd = 60 ma lna spar (100 mhz C 20 ghz) the s-parameter are for single amplifer. freq s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (db) (ang) (db) (ang) (db) (ang) (db) (ang) 0.1 -1.074 -31.307 30.372 152.301 -38.598 79.819 -8.582 -20.776 0.5 -7.419 -99.051 23.126 101.761 -26.683 69.129 -15.871 -48.167 0.7 -9.041 -115.776 20.596 91.484 -24.165 66.973 -17.771 -49.366 0.9 -10.023 -128.775 18.669 83.583 -22.241 64.407 -19.273 -49.337 1.0 -10.399 -133.219 17.812 80.178 -21.408 63.192 -19.593 -47.750 1.5 -11.500 -153.458 14.600 65.392 -18.141 55.849 -21.764 -45.214 1.7 -11.572 -161.056 13.591 60.010 -17.142 52.498 -23.571 -49.907 1.9 -11.538 -167.985 12.711 54.875 -16.230 49.228 -25.238 -55.033 2.0 -11.537 -171.125 12.302 52.304 -15.809 47.475 -25.944 -59.265 2.5 -11.445 175.803 10.521 40.088 -13.992 38.931 -29.570 -90.923 3.0 -11.401 164.403 9.105 28.417 -12.490 30.048 -30.232 -135.945 3.5 -11.399 153.594 7.971 17.073 -11.217 21.106 -27.571 -170.069 4.0 -11.292 141.943 7.028 5.853 -10.123 11.945 -25.227 162.620 4.5 -10.974 129.027 6.226 -5.240 -9.162 2.551 -22.592 135.000 5.0 -10.296 117.928 5.475 -16.254 -8.374 -6.976 -20.256 108.170 5.5 -9.477 106.083 4.815 -27.119 -7.680 -16.555 -17.261 83.874 6.0 -8.603 93.478 4.202 -37.909 -7.123 -26.573 -14.249 67.156 7.0 -7.784 71.674 3.114 -57.850 -6.153 -44.852 -10.893 50.129 8.0 -9.391 55.504 2.483 -76.469 -5.211 -62.621 -10.730 45.175 9.0 -12.116 29.799 2.048 -96.207 -4.265 -81.667 -10.574 42.707 10 -11.471 -5.874 1.407 -116.940 -3.779 -102.196 -8.835 20.126 11 -10.440 -27.549 0.451 -136.443 -3.736 -121.324 -7.217 -2.639 12 -11.273 -53.811 -0.038 -153.270 -3.384 -139.868 -6.823 -17.959 13 -20.959 -65.754 -0.721 -168.292 -3.563 -154.175 -7.004 -13.899 14 -22.024 -163.703 -0.599 171.370 -2.714 -176.815 -7.040 -17.790 15 -14.309 126.539 -0.665 147.554 -2.345 158.380 -7.104 -26.156 16 -12.226 65.090 -1.681 115.096 -3.019 125.379 -5.734 -43.382 17 -7.911 -127.772 -6.012 131.726 -6.652 139.053 -2.042 -74.188 18 -12.992 -10.792 -5.844 90.462 -6.431 96.994 -2.257 -68.762 19 -7.042 108.026 -4.522 103.345 -4.710 108.465 -3.313 -89.050 20 -4.476 31.259 -4.758 55.261 -5.060 58.580 -4.528 -112.266 table 8. typical noise parameters, for single amplifer, vdd = 4.8 v, idd = 60 ma freq fmin opt opt r n/50 ghz db mag. ang. 450 0.31 0.557 -17.0 0.035 700 0.23 0.438 0.5 0.033 835 0.21 0.460 21.6 0.032 950 0.23 0.423 33.1 0.032 1450 0.42 0.172 92.7 0.036 notes: 1. the fmin values are based on noise fgure measurements at multiple input impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 7. 3. idd can be obtained by varying the vg1/vg2. refer to fgure 7.
10 table 9. typical scattering parameters, vdd = 4.8 v, idd = 75 ma lna spar (100 mhz C 20 ghz) the s-parameter are for single amplifer. freq s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (db) (ang) (db) (ang) (db) (ang) (db) (ang) 0.1 -1.313 -33.530 31.014 150.648 -38.589 82.014 -9.661 -21.676 0.5 -7.873 -101.259 23.314 100.420 -26.803 70.767 -17.048 -45.449 0.7 -9.472 -117.752 20.741 90.485 -24.212 68.268 -18.831 -45.680 0.9 -10.402 -130.466 18.790 82.841 -22.239 65.516 -20.230 -44.960 1.0 -10.777 -134.737 17.925 79.542 -21.407 64.225 -20.421 -43.253 1.5 -11.805 -154.527 14.699 65.015 -18.111 56.520 -22.336 -39.860 1.7 -11.852 -162.032 13.689 59.715 -17.106 53.063 -24.200 -43.748 1.9 -11.792 -168.879 12.807 54.640 -16.185 49.733 -25.976 -48.172 2.0 -11.784 -171.996 12.394 52.113 -15.760 47.932 -26.759 -52.109 2.5 -11.656 175.184 10.608 40.041 -13.941 39.243 -31.149 -84.360 3.0 -11.594 163.899 9.189 28.441 -12.442 30.253 -32.084 -136.841 3.5 -11.581 153.195 8.048 17.188 -11.174 21.216 -28.646 -173.768 4.0 -11.462 141.576 7.102 6.023 -10.080 11.962 -25.816 158.924 4.5 -11.124 128.688 6.296 -5.029 -9.126 2.544 -22.900 131.803 5.0 -10.429 117.634 5.542 -15.972 -8.341 -7.041 -20.389 105.521 5.5 -9.589 105.823 4.879 -26.805 -7.655 -16.664 -17.298 81.989 6.0 -8.686 93.240 4.265 -37.559 -7.099 -26.672 -14.261 65.816 7.0 -7.862 71.395 3.176 -57.450 -6.142 -44.949 -10.940 49.294 8.0 -9.495 55.210 2.549 -76.083 -5.204 -62.770 -10.846 44.633 9.0 -12.268 29.175 2.104 -95.838 -4.274 -81.847 -10.697 42.499 10.0 -11.584 -6.517 1.463 -116.574 -3.791 -102.332 -8.928 20.087 11.0 -10.522 -28.153 0.508 -136.137 -3.751 -121.438 -7.284 -2.588 12.0 -11.357 -54.514 0.015 -153.014 -3.401 -139.971 -6.889 -17.777 13.0 -21.178 -67.548 -0.677 -168.073 -3.589 -154.248 -7.059 -13.574 14.0 -21.655 -166.052 -0.566 171.616 -2.742 -176.860 -7.048 -17.396 15.0 -14.145 126.771 -0.631 147.729 -2.383 158.332 -7.099 -25.793 16.0 -12.117 65.327 -1.666 115.223 -3.062 125.393 -5.710 -43.125 17.0 -7.916 -127.952 -5.980 131.954 -6.667 139.243 -2.048 -74.067 18.0 -13.009 -9.966 -5.842 90.681 -6.475 97.145 -2.253 -68.631 19.0 -6.983 107.757 -4.520 103.388 -4.751 108.605 -3.313 -88.879 20.0 -4.463 31.666 -4.751 55.507 -5.083 58.833 -4.500 -112.076 table 10. typical noise parameters, for single amplifer, vdd = 4.8 v, idd = 75 ma freq fmin opt opt r n/50 ghz db mag. ang. 450 0.32 0.521 -18.1 0.036 700 0.23 0.426 -6.4 0.033 835 0.23 0.387 17.8 0.033 950 0.25 0.388 25.5 0.033 1450 0.43 0.139 93.9 0.037 notes: 1. the fmin values are based on noise fgure measurements at multiple input impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in figure 7. 3. idd can be obtained by varying the vg1/vg2. refer to fgure 7.
11 balanced mode application electrical specifcations t a = 25 c, vdd1 = vdd2 = 4.8 v, idd1 = idd2 = 60 ma at rbias =1.5 kohm, rf performance at 900 mhz, cw operation unless otherwise stated. symbol parameter and test condition units typ. vdd supply voltage per amplifer v 4.8 idd supply current per amplifer ma 60 gain gain db 18.2 nf noise figure db 0.37 op1db output power at 1db gain compression dbm 23.9 iip3 input third order intercept point dbm 21.6 s11 input return loss, 50 ? source db -24.1 s22 output return loss, 50 ? load db -34.7 s12 reverse isolation db -23.1 balanced amplifer demo board layout figure 18. balanced amplifer demo board layout diagram notes: 1. recommended pcb material is 10 mils rogers ro4350. 2. suggested component values may vary according to layout and pcb material. 3. input board loss at 900 mhz is 0.133 db. l2 l1 rfin r2 x1 c15 c14 c16 c3 mga-16x16 demoboard (2-port) rev 1 c5 c4 c20 vsd2 l3 c17 april 2011 c22 r8 c26 c21 c13 r6 c12 c18 r7 l4 c19 c9 x2 g 0.45mm w 0.58mm h 10mil dk 3.48 ro4350 r9 r10 c7 r1 c1 c2 r3 c6 c23 c25 c10 c8 r4 c11 c24 vdd2 vsd1 vdd1 rfout r5
12 balanced amplifer demo board schematic figure 19. balanced amplifer demo board schematic. table 11. component list for 900 mhz matching part size value detail part number c1, c12 0402 20 pf gjm1555c1h200gb01 c2, c8, c13, c22 0402 0.1 m f grm155r71c104ka88d c3, c9, c16, c19 0402 100 pf grm1555c1h101jd01e c6, c20, c23, c34 0805 4.7 m f grm21br60j475ka11l c7, c21 0402 12 pf gjm1555c1h120gb01 c4, c5, c10, c11, c14, c15, c17, c18, c25, c26 0402 not used l1, l2 0402 68 nh lqw15an68ng00 l3, l4 0402 120 nh lqw15anr12j00 r1, r6 0402 51 ohm rk73b1ettp510j r3, r8 0402 1.5 kohm rk73b1eltp152j r4, r7 0402 0 ohm rk73b1ettp0r0j r9, r10 0402 10 ohm rk73b1ettp100j r2, r5 0402 51 ohm rk73b1ettp510j x1 C C x3c09p1-03s x2 C C c0810j5003ahf
13 typical 900 mhz rf performance plots on balanced mode rf performance at t a = 25 c, vdd1 = vdd2 = 4.8 v, idd1 = idd2 = 60 ma, lna mode, measured on demo board in figure 18. signal is cw unless stated otherwise. application test circuit is shown in figure 19 and table 11. iip3 test condition: frf1-frf2 = 1mhz with input power of -20 dbm per tone. figure 20. nf vs frequency vs temperature [1] figure 21. gain vs frequency vs temperature figure 22. iip3 vs frequency vs temperature figure 23. op1db vs frequency vs temperature figure 24. input return loss, output return loss, gain, reverse isolation vs frequency 1 0 0 c 2 5 c - 4 0 c 1 0 0 c 2 5 c - 4 0 c 1 0 0 c 2 5 c - 4 0 c 1 0 0 c 2 5 c - 4 0 c s(2,1) s(1,1) s(2,2) s(1,2) -60 -50 -40 -30 -20 -10 0 10 20 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 frequency (ghz) s-parameter (db) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 450 550 650 750 850 950 1050 1150 1250 frequency (mhz) nf (db) 12 14 16 18 20 22 24 26 450 550 650 750 850 950 1050 1150 1250 frequency (mhz) gain (db) 8 10 12 14 16 18 20 22 24 26 450 550 650 750 850 950 1050 1150 1250 frequency (mhz) iip3 (dbm) 20 21 22 23 24 25 26 27 28 450 550 650 750 850 950 1050 1150 1250 frequency (mhz) p1db (dbm)
14 figure 25. mu stability factors vs frequency vs temperature note: 1. circuit trace losses for nf have been de-embedded from measurements above. package dimensions part number ordering information part number no. of devices container MGA-16116-BLKG 100 antistatic bag mga-16116-tr1g 1000 7 reel 4.00 0.10 0.00 0.05 0.20 ref. 2.10 4.00 0.10 pin 1 dot by marking 0.85 0.10 top view side view bottom view avago 16116 yyww xxxx 0.30 2.10 0.55 pin #1 identication chamfer 0.30 x 45 0.65 bsc figure 26. mu stability factors vs frequency vs temperature 1 0 0 c - 4 0 c 2 5 c 1 0 0 c - 4 0 c 2 5 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) mu 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) muprime
15 recommended pcb land pattern and stencil design device orientation user feed direction top view end view user feed direction cover tape carrier tape reel avago 16116 yyww xxxx avago 16116 yyww xxxx avago 16116 yyww xxxx note : 1. all dimensions are in milimeters 2. 4mil stencil thickness is recommended land pattern stencil opening combination of land pattern & stencil opening 1.980 1.980 0.270 0.650 0.485 0.492 2.10 pin #1 0.55 2.10 0.300 0.650 0.400 pin #1 4.000 4.000 3.935 3.935 4.000 4.000 2.100 0.650 0.550
16 tape dimensions 10 max 10 max 4.25 0.10 4.25 0.10 1.13 0.10 5.50 0.05 1.75 0.10 8.00 0.10 ? 1.50 0.10 12.0 0.30 ?0.10 ?1.50 0.25 2.00 0.05 4.00 0.10 a. k. b. 0.279 0.02
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-3721en - october 31, 2012 reel dimensions C 7 inch ps 6 ps 6 back view ? 178.0 0.5 ? 55.0 0.5 6.25 mm embossed letters lettering thickness: 1.6 mm see detail "x" slot hole "b" slot hole (2x) 180 apart. slot hole "a": 3.0 0.5 mm (1x) slot hole "b": 2.5 0.5 mm (1x) ? 13.0 65 45 r10.65 45 r5.2 embossed ribs raised: 0.25 mm, width: 1.25 mm 18.0* max. ? 51.2 0.3 ? 178.0 0.5 recycle logo front view 120 1.5 min. ? 20.2 min. -0.2 +0.5 detail "x" -0.0 +1.5* 12.4 detail "y" (slot hole) 3.5 1.0 see detail "y" front back front back slot hole "a" ? 178.0 0.5

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